Part Number Hot Search : 
DTA12 100K1 AXHV5005 M30201 A001M12 10012 14S12 M12541PE
Product Description
Full Text Search

IRGIB10B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGIB10B60KD1PBF_4215199.PDF Datasheet


 Full text search : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE


 Related Part Number
PART Description Maker
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
GT40G121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRG4BC29F IRG4BC30F IRG4BC30 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
IRF[International Rectifier]
International Rectifier, Corp.
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
GT15Q311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
MGP14N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP15N60U-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW12N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP4N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
CM400HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
IRGIB10B60KD1PBF Stereo IRGIB10B60KD1PBF specs IRGIB10B60KD1PBF afe + homeplug av IRGIB10B60KD1PBF appreciate IRGIB10B60KD1PBF standard
IRGIB10B60KD1PBF state IRGIB10B60KD1PBF mitsubishi IRGIB10B60KD1PBF 参数 封装 IRGIB10B60KD1PBF microsemi IRGIB10B60KD1PBF Electronic
 

 

Price & Availability of IRGIB10B60KD1PBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
7.0376620292664